|01| Large-scale, adhesive-free and omnidirectional 3D nanocone anti-reflection films for high performance photovoltaics

|02| Second generation fully differential current conveyor based analog circuits

|03| Origin of the anomalous trends in band alignment of GaX/ZnGeX2（X = N, P, As, Sb） heterojunctions

|04| Improving the data retention of phase change memory by using a doping element in selected Ge2Sb2Te5

|05| PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Rational molecular passivation for high-performance perovskite light-emitting diodes

|06| The energy-level and vibrational frequency properties of a polaron weak-coupled in a quantum well with asymmetrical Gaussian confinement potential

|07| OPTICAL PROPERTIES OF 2D MATERIALS Signatures of moire excitons

|08| Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

|09| SEMICONDUCTOR LASERS Supersymmetric laser arrays

|10| Li/C composites as anodes for high energy density rechargeable Li batteries

|11| Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

|12| Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites

|13| PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Surface passivation of perovskite film for efficient solar cells

|14| Pyramid size control and morphology treatment for high-efficiency silicon heterojunction solar cells

|15| Optimization of broadband omnidirectional antireflection coatings for solar cells

|16| Influence of defect states on the performances of planar tin halide perovskite solar cells

|17| Bandgap engineered novel g-C3N4/G/h-BN heterostructure for electronic applications

|18| Photovoltaic properties of Cu2O-based heterojunction solar cells using n-type oxide semiconductor nano thin films prepared by low damage magnetron sputtering method

|19| Healthcare electronic skin devices

|20| Growth behavior and electronic properties of Gen+1 and AsGen（n = 1–20） clusters: a DFT study